Preparation of Multilayered Thin Silicon-on-Insulator Structure.
نویسندگان
چکیده
منابع مشابه
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متن کاملthe structure of lie derivations on c*-algebras
نشان می دهیم که هر اشتقاق لی روی یک c^*-جبر به شکل استاندارد است، یعنی می تواند به طور یکتا به مجموع یک اشتقاق لی و یک اثر مرکز مقدار تجزیه شود. کلمات کلیدی: اشتقاق، اشتقاق لی، c^*-جبر.
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ژورنال
عنوان ژورنال: Journal of the Surface Finishing Society of Japan
سال: 1995
ISSN: 0915-1869,1884-3409
DOI: 10.4139/sfj.46.688